2014. 3. 31 1/2 semiconductor technical data kdr729 schottky barrier type diode revision no : 7 low voltage high speed switching. features h low forward voltage : v f(4) =0.43v(typ.) h i o =200ma rectification possible. h small package : usc. maximum rating (ta=25 ? ) 1. anode 2. cathode usc dim millimeters a b c d e f g h j k 2.50 0.2 1.25 0.05 0.90 0.05 1.70 0.05 0.126 0.03 0~0.1 0.15 0.05 0.4 2 +4/-2 l m4~6 i 1.0 max cathode mark m m i c j g d 2 1 b e k a f h l + _ + _ + _ + _ 0.30 0.06 + _ 0.27 0.10 + _ + _ + _ * : mounted on a glass epoxy circuit board of 20 ? 20mm, pad dimension of 4 ? 4mm. electrical characteristics (ta=25 ? ) marking um type name lot no. characteristic symbol rating unit maximum (peak) reverse voltage v rm 30 v reverse voltage v r 30 v maximum (peak) forward current i fm 300 ma average forward current i o 200 ma surge current (10ms) i fsm 1 a power dissipation p d 200* mw junction temperature t j 125 ? storage temperature range t stg -55 q 125 ? characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.22 - v v f(2) i f =10ma - 0.29 - v f(3) i f =100ma - 0.38 - v f(4) i f =200ma - 0.43 0.55 reverse current i r v r =30v - - 50 a total capacitance c t v r =0v, f=1mhz - 50 - pf
2014. 3. 31 2/2 kdr729 revision no : 7 i - v r reverse voltage v (v) 05 reverse current i ( a) rr 0.5 1 5 r 10 f forward voltage v (v) f t forward current i (ma) i - v ff 0 0.1 1 3 10 2 10 10 20 25 reverse voltage v (v) 5 5 10 50 0 r 15 10 100 c - v tr 30 0.2 0.3 0.4 0.6 0.5 10 15 20 30 25 total capacitance c (pf) ta=25 c f=1mhz ta=25 c ta=85 c ta=50 c ta=25 c ta=-25 c ta=-40 c
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